BT151F-600

www.DataSheet4U.com Preliminary SemiWell Semiconductor BT151F-600 Symbol 3. Gate ○ ○ Silicon Controlled Rectifiers Features Repetitive Peak Off-State Voltage : 600V ◆ R.M.S On-State Current ( IT(RMS)= 12 A ) ◆ Low On-State Voltage (1.4V(Typ.)@ ITM) ◆ Isolation Voltage ( VISO = 1500V AC ) ◆ ▼ 1 23 ○ 2. Anode 1. Cathode TO-220F General Description Standard gate triggering SCR is fully isolated package suitable for the application where requiring high bidirectional blocking voltage capability and also suitable for over voltage protection ,motor control circuit in power tool, inrush current limit circuit and heating control system. Absolute Maximum Ratings Symbol VDRM IT(AV) IT(RMS) ITSM I2 t di/dt PGM PG(AV) IFGM VRGM VISO TJ TSTG ( TJ = 25°C unless otherwise specified ) Condition Ratings 600 Half Sine Wave : TC = 78 °C 180° Conduction Angle 1/2 Cycle, 60Hz, Sine Wave Non-Repetitive t = 8.3ms 7.6 12 120 72 50 5 Over any 20ms period 0.5 2 5 A.C. 1 minute 1500 - 40 ~ 125 - 40 ~ 150 Parameter Repetitive Peak Off-State Voltage Average On-State Current R.M.S On-State Current Surge On-State Current I2t for Fusing Critical rate of rise of on-state current Forward Peak Gate Power Dissipation Forward Average Gate Power Dissipation Forward Peak Gate Current Reverse Peak Gate Voltage Isolation Breakdown Voltage(R.M.S.) Operating Junction Temperature Storage Temperature Units V A A A A2 s A/㎲ W W A V V °C °C Oct, 2003. Rev. 0 1/5 Copyright@SemiWell Semiconductor Co., Ltd., Al...