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BT151X-650 Datasheet

Part Number BT151X-650
Manufacturers NXP
Logo NXP
Description Thyristors
Datasheet BT151X-650 DatasheetBT151X-650 Datasheet (PDF)

Philips Semiconductors Product specification Thyristors BT151X series GENERAL DESCRIPTION Glass passivated thyristors in a full pack, plastic envelope, intended for use in applications requiring high bidirectional blocking voltage capability and high thermal cycling performance. Typical applications include motor control, industrial and domestic lighting, heating and static switching. QUICK REFERENCE DATA SYMBOL VDRM, VRRM IT(AV) IT(RMS) ITSM PARAMETER BT151XRepetitive peak off-state voltag.

  BT151X-650   BT151X-650






Part Number BT151X-650R
Manufacturers WeEn
Logo WeEn
Description SCR
Datasheet BT151X-650 DatasheetBT151X-650R Datasheet (PDF)

BT151X-650R SCR 24 February 2018 Product data sheet 1. General description Planar passivated Silicon Controlled Rectifier (SCR) in a SOT186A (TO-220F) "full pack" plastic package intended for use in applications requiring high bidirectional blocking voltage and high current surge capability with high thermal cycling performance. 2. Features and benefits • High bidirectional blocking voltage capability • High current surge capability • High thermal cycling performance • Isolated mounting base .

  BT151X-650   BT151X-650







Part Number BT151X-650LTN
Manufacturers WeEn
Logo WeEn
Description SCR
Datasheet BT151X-650 DatasheetBT151X-650LTN Datasheet (PDF)

BT151X-650LTN SCR Rev - 01 28 January 2019 Product data sheet 1. General description Planar passivated Silicon Controlled Rectifier (SCR) in a SOT186A (TO-220F) "full pack" plastic package intended for use in applications requiring good bidirectional blocking voltage and high current surge capability with high thermal cycling performance and high junction temperature capability (Tj(max) = 150 °C). 2. Features and benefits • High junction operating temperature capability (Tj(max) = 150 °C) • Go.

  BT151X-650   BT151X-650







Part Number BT151X-650LT
Manufacturers WeEn
Logo WeEn
Description SCR
Datasheet BT151X-650 DatasheetBT151X-650LT Datasheet (PDF)

BT151X-650LT SCR Rev - 01 28 November 2018 Product data sheet 1. General description Planar passivated Silicon Controlled Rectifier (SCR) in a SOT186A (TO-220F) "full pack" plastic package intended for use in applications requiring good bidirectional blocking voltage and high current surge capability with high thermal cycling performance and high junction temperature capability (Tj(max) = 150 °C). 2. Features and benefits • High junction operating temperature capability (Tj(max) = 150 °C) • Go.

  BT151X-650   BT151X-650







Part Number BT151X-650C
Manufacturers WeEn
Logo WeEn
Description SCR
Datasheet BT151X-650 DatasheetBT151X-650C Datasheet (PDF)

BT151X-650C SCR 24 February 2018 Product data sheet 1. General description Planar passivated Silicon Controlled Rectifier (SCR) in a SOT186A (TO-220F) "full pack" plastic package intended for use in applications requiring high bidirectional blocking voltage capability and high thermal cycling performance. 2. Features and benefits • High bidirectional blocking voltage capability • High thermal cycling performance • Isolated mounting base package • Planar passivated for voltage ruggedness and r.

  BT151X-650   BT151X-650







Thyristors

Philips Semiconductors Product specification Thyristors BT151X series GENERAL DESCRIPTION Glass passivated thyristors in a full pack, plastic envelope, intended for use in applications requiring high bidirectional blocking voltage capability and high thermal cycling performance. Typical applications include motor control, industrial and domestic lighting, heating and static switching. QUICK REFERENCE DATA SYMBOL VDRM, VRRM IT(AV) IT(RMS) ITSM PARAMETER BT151XRepetitive peak off-state voltages Average on-state current RMS on-state current Non-repetitive peak on-state current MAX. MAX. MAX. UNIT 500 500 5.7 9 100 650 650 5.7 9 100 800 800 5.7 9 100 V A A A PINNING - SOT186A PIN 1 2 3 DESCRIPTION cathode anode gate PIN CONFIGURATION case SYMBOL a k case isolated 1 2 3 g LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. half sine wave; Ths ≤ 87 ˚C all conduction angles half sine wave; Tj = 25 ˚C prior to surge t = 10 ms t = 8.3 ms t = 10 ms ITM = 20 A; IG = 50 mA; dIG/dt = 50 mA/µs -40 -500 5001 MAX. -650 6501 5.7 9 100 110 50 50 2 5 5 5 0.5 150 125 -800 800 UNIT V A A A A A2s A/µs A V V W W ˚C ˚C VDRM, VRRM Repetitive peak off-state voltages IT(AV) IT(RMS) ITSM Average on-state current RMS on-state current Non-repetitive peak on-state current I2t dIT/dt IGM VGM VRGM PGM PG(AV) Tstg Tj I2t for fusing Repetitive rate of rise of on-state current after triggering Peak gate current Peak gate vol.


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