BT151X-800R

BT151X-800R SCR 5 September 2018 Product data sheet 1. General description Planar passivated Silicon Controlled Rectifier (SCR) in a SOT186A (TO-220F) "full pack" plastic package intended for use in applications requiring high bidirectional blocking voltage and high current surge capability with high thermal cycling performance. 2. Features and benefits High bidirectional blocking voltage capability High current surge capability High thermal cycling performance Isolated mounting base package Planar passivated for voltage ruggedness and reliability 3. Applications Capacitive Discharge Ignition (CDI) Crowbar protection Inrush protection Motor control Voltage regulation 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VRRM repetitive peak reverse voltage IT(AV) average on-state current half sine wave; Th ≤ 69 °C IT(RMS) RMS on-state current half sine wave; Th ≤ 69 °C; Fig. 1; Fig. 2; Fig. 3 ITSM non-repetitive peak on- half sine wave; Tj(init) = 25 °C; state current tp = 10 ms; Fig. 4; Fig. 5 half sine wave; Tj(init) = 25 °C; tp = 8.3 ms Tj junction temperature Static characteristics IGT gate trigger current Dynamic characteristics VD = 12 V; IT = 0.1 A; Tj = 25 °C; Fig. 7 Min Typ Max Unit - - 800 V - - 7.5 A - - 12 A - - 120 A - - 132 A - - 125 °C - 2 15 mA WeEn Semiconductors BT151X-800R SCR Symbol dVD/dt Parameter rate of rise of off-state voltage Conditions VDM = 536...