SCR. BT151Y-650LTN Datasheet

BT151Y-650LTN Datasheet PDF

Part BT151Y-650LTN
Description SCR
Feature BT151Y-650LTN SCR Rev.01 - 11 June 2020 Product data sheet 1. General description Planar passivate.
Manufacture WeEn
Datasheet
Download BT151Y-650LTN Datasheet




BT151Y-650LTN
BT151Y-650LTN
SCR
Rev.01 - 11 June 2020
Product data sheet
1. General description
Planar passivated Silicon Controlled Rectifier (SCR) in IITO220 internally insulated plastic package
intended for use in applications requiring good bidirectional blocking voltage and high current surge
capability with high thermal cycling performance and high junction temperature capability (Tj(max) =
150 °C).
2. Features and benefits
High junction operating temperature capability (Tj(max) = 150 °C)
Good bidirectional blocking voltage capability
High current surge capabilit
High thermal cycling performance
Planar passivated for voltage ruggedness and reliability
Internally insulated package
Isolated mounting base with 2500 V (RMS) isolation
3. Applications
Protection circuit in Power Supplies for Consumer / Industrial / Medical Equipment
Capacitive Discharge Ignition (CDI)
Crowbar protection
Inrush protection
Motor control
Voltage regulation
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Absolute maximum rating
VDRM
repetitive peak off-state
voltage
IT(RMS)
RMS on-state current
ITSM
non-repetitive peak on-
state current
Tj
junction temperature
Conditions
half sine wave; Tmb ≤ 123 °C;
Fig. 1; Fig. 2; Fig. 3
half sine wave; Tj(init) = 25 °C; tp = 10 ms;
Fig. 4; Fig. 5
half sine wave; Tj(init) = 25 °C; tp = 8.3 ms
Values
650
12
120
132
150
Unit
V
A
A
A
°C



BT151Y-650LTN
WeEn Semiconductors
BT151Y-650LTN
SCR
Symbol Parameter
Static characteristics
IGT
gate trigger current
IH
holding current
VT
on-state voltage
Dynamic characteristics
dVD/dt
rate of rise of off-state
voltage
Conditions
VD = 12 V; IT = 0.1 A; Tj = 25 °C; Fig. 7
VD = 12 V; Tj = 25 °C; Fig. 9
IT = 12 A; Tj = 25 °C; Fig. 10
VDM = 436 V; Tj = 150 °C; RGK= 100
Ω; (VDM = 67% of VDRM); exponential
waveform
5. Pinning information
Table 2. Pinning information
Pin
Symbol Description
1
K
cathode
2
A
anode
3
G
gate
mb
n.c.
mounting base; isolated
Simplified outline
Min Typ Max Unit
1.5
-
5
mA
-
-
20
mA
-
1.15 1.5
V
500 -
-
V/μs
Graphic symbol
A
K
G
sym037
1 23
IITO-220
6. Ordering information
Table 3. Ordering information
Type number
Package
name
BT151X-650LTN IITO220
Orderable part number Packing
method
BT151Y-650LTNQ
Tube
Small packing Package
quantity
version
50
IITO220E
Package
issue date
15-Dec-2017
7. Marking
Table 4. Marking codes
Type number
BT151Y-650LTN
Marking codes
BT151Y
650LTN
BT151Y-650LTN
Product data sheet
All information provided in this document is subject to legal disclaimers.
11 June 2020
© WeEn Semiconductors Co., Ltd. 2020 All rights reserved
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