BT169DW

isc Thyristors BT169DW DESCRIPTION ·With SOT-223 packaging ·High surge capability ·Glass passivated junctions and center gate fire for greater parameter uniformity and stability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDRM Repetitive peak off-state voltage VRRM Repetitive peak off-state voltage IT(AV) Average on-state current IT(RMS) RMS on-state current PG(AV) Average gate power ITSM Non-repetitive peak on-state current Tj Operating junction temperature Tstg Storage temperature MIN 400 400 0.63 1 0.1 8 -40~110 -40~150 UNIT V V A A W A ℃ ℃ ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS Repetitive peak off-state voltage VRRM=400V IRRM Repetitive peak reverse voltage VRRM=400V;Tj=110℃ Repetitive peak reverse current VRRM=400V IDRM Repetitive peak off-state current VDRM=400V;Tj=110℃ IGT Gate trigger current VTM On-state voltage IH Holding current VGT Gate trigger voltage VD= 12V; IT= 10mA IT=2A IGT=0.5mA ,VD=12V VD= 12V; IT= 10mA MIN MAX UNIT 5 μA 100 5 μA 100 120 μA 1.5 V 5 mA 0.8 V isc website：www.iscsemi.com isc & iscsemi is registered trademark isc Thyristors BT169DW NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applicati...