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IGBT. BT40T60ANFU Datasheet

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IGBT. BT40T60ANFU Datasheet







BT40T60ANFU Datasheet PDF




BT40T60ANFU Datasheet PDF


Part Number

BT40T60ANFU

Description

Silicon FS Trench IGBT

Feature Silicon FS Trench IGBT ○R BT40T60 AN FU General Description: VCES 600 V Using HUAJING's proprietary trench d esign and advanced Field Stop (FS) IC 40 A technology, offering superior co nduction and switching performances. P tot (TC=25℃) 280 W VCE(sat) 1. 9 V Features: l FS Trench Technolog y, Positive temperature coefficient l L ow saturation voltage: VCE(sat.
Manufacture

Huajing Microelectronics

Datasheet
Download BT40T60ANFU Datasheet

BT40T60ANFU












Part Number

BT40T60ANFU

Description

Silicon FS Trench IGBT

Feature Silicon FS Trench IGBT ○R BT40T60 AN FU General Description: VCES 600 V Using HUAJING's proprietary trench d esign and advanced Field Stop (FS) IC 40 A technology, offering superior co nduction and switching performances. P tot (TC=25℃) 280 W VCE(sat) 1. 9 V Features: l FS Trench Technolog y, Positive temperature coefficient l L ow saturation voltage: VCE(sat.
Manufacture

Huajing Microelectronics

Datasheet
Download BT40T60ANFU Datasheet

BT40T60ANFU



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