BTA12-600BW3G, BTA12-800BW3G
Triacs
Silicon Bidirectional Thyristors
Designed for high performance full−wave ac control...
BTA12-600BW3G, BTA12-800BW3G
Triacs
Silicon Bidirectional Thyristors
Designed for high performance full−wave ac control applications where high noise immunity and high commutating di/dt are required.
Features
Blocking
Voltage to 800 V On-State Current Rating of 12 A RMS at 25°C Uniform Gate Trigger Currents in Three Quadrants High Immunity to dV/dt − 2000 V/ms minimum at 125°C Minimizes Snubber Networks for Protection Industry Standard TO-220AB Package High Commutating dI/dt − 2.5 A/ms minimum at 125°C Internally Isolated (2500 VRMS) These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Peak Repetitive Off−State
Voltage (Note 1) (TJ = −40 to 125°C, Sine Wave, 50 to 60 Hz, Gate Open)
BTA12−600BW3G BTA12−800BW3G
VDRM, VRRM
600 800
V
On-State RMS Current
IT(RMS)
(Full Cycle Sine Wave, 60 Hz, TC = 80°C)
12
A
Peak Non-Repetitive Surge Current (One Full Cycle Sine Wave, 60 Hz, TC = 25°C) Circuit Fusing Consideration (t = 8.3 ms)
ITSM I2t
105 A 46 A2sec
Non−Repetitive Surge Peak Off−State
Voltage (TJ = 25°C, t = 10ms)
VDSM/ VRSM
VDSM/VRSM +100
V
Peak Gate Current (TJ = 125°C, t = 20ms) IGM 4.0 A
Peak Gate Power (Pulse Width ≤ 1.0 ms, TC = 80°C)
PGM 20 W
Average Gate Power (TJ = 125°C)
PG(AV)
1.0
W
Operating Junction Temperature Range
TJ −40 to +125 °C
Storage Temperature Range
Tstg −40 to +150 °C
RMS Isolation
Voltage (t = 300 ms, R.H. ≤ 30%, TA = 25°C)
Viso ...