CYStech Electronics Corp.
PNP Epitaxial Planar Power Transistor
Spec. No. : C657FP www.DataSheet4U.com Issued Date : 20...
CYStech Electronics Corp.
PNP Epitaxial Planar Power Transistor
Spec. No. : C657FP www.DataSheet4U.com Issued Date : 2004.09.01 Revised Date :2007.12.27 Page No. : 1/4
BTA1640FP
Features
Low collector-emitter saturation
voltage, VCE(sat) = -0.4V(max) @ IC = -3A, IB=-0.1A Excellent current gain linearity Pb-free package
Symbol
BTA1640FP
Outline
TO-220FP
B:Base C:Collector E:Emitter BCE
Absolute Maximum Ratings (Ta=25°C)
Parameter Collector-Base
Voltage Collector-Emitter
Voltage Emitter-Base
Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation @ TA=25℃ Power Dissipation @ TC=25℃ Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Junction Temperature Storage Temperature
Note : 1. Single Pulse , Pw≦380μs, Duty≦2%.
Symbol VCBO VCEO VEBO IC ICP PD PD RθJA RθJC Tj Tstg
Limits -50 -50 -5 -7 -10 (Note 1) 2 40 62.5 3.125 150 -55~+150
Unit V V V A W °C/W °C/W °C °C
BTA1640FP
CYStek Product Specification
CYStech Electronics Corp.
Characteristics (Ta=25°C)
Symbol *BVCEO BVCBO BVEBO ICEO ICBO IEBO *VCE(sat) *VBE(sat) *hFE Min. -50 -50 -5 250 Typ. Max. -50 -10 -10 -0.4 -1 500 Unit V V V μA μA μA V V -
Spec. No. : C657FP www.DataSheet4U.com Issued Date : 2004.09.01 Revised Date :2007.12.27 Page No. : 2/4
Test Conditions IC=-10mA, IB=0 IC=-1mA, IE=0 IE=-1mA, IC=0 VCE=-30V, IB=0 VCB=-40V, IB=0 VEB=-5V, IC=0 IC=-3A, IB=-100mA IC=-3A, IB=-100mA VCE=-2V, IC=-200mA
*Pulse Test : Pulse Width ≤380μs, Duty Cycle≤2%
Characteristic Cu...