BTA1664M3

CYStech Electronics Corp. Low Vcesat PNP Epitaxial Planar Transistor Spec. No. : C315M3 www.DataSheet4U.com Issued Date : 2005.01.25 Revised Date : 2007.12.20 Page No. : 1/6 BTA1664M3 Features Low VCE(sat), VCE(sat)=-0.24V (typical), at IC / IB =- 500mA /- 20mA Pb-free package Symbol BTA1664M3 Outline SOT-89 B：Base C：Collector E：Emitter B C E Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Pd Tj Tstg Limits -40 -25 -5 -2 0.6 1 *2 2 *3 150 -55~+150 Unit V V V A W °C °C Note : *1 Single pulse, Pw=10ms *2 When mounted on FR-4 PCB with area measuring 10×10×1 mm *3 When mounted on ceramic with area measuring 40×40×1 mm BTA1664M3 CYStek Product Specification CYStech Electronics Corp. Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(on) *hFE 1 *hFE 2 fT Cob Min. -40 -25 -5 -0.5 120 40 Typ. -0.24 120 19 Max. -100 -100 -0.4 -0.8 390 Unit V V V nA nA V V MHz pF Spec. No. : C315M3 www.DataSheet4U.com Issued Date : 2005.01.25 Revised Date : 2007.12.20 Page No. : 2/6 Test Conditions IC=-50μA, IE=0 IC=-1mA, IB=0 IE=-50μA, IC=0 VCB=-40V, IE=0 VEB=-5V, IC=0 IC=-500mA, IB=-20mA VCE=-1V, IC=-10mA VCE=-1V, IC=-100mA VCE=-1V, IC=-700mA VCE=-5V, IC=-10mA, f=100MHz VCB=-10V, f=1MHz *Pulse Test : Pulse Width ≤380μs, Duty Cycle≤2% Classification of hFE 1 Rank Range Q 120~270 R 180~390 ...