BTA1759M3

CYStech Electronics Corp. High Voltage PNP Epitaxial Planar Transistor www.DataSheet4U.com Spec. No. : C309M3 Issued Date : 2003.06.30 Revised Date : Page No. : 1/4 BTA1759M3 Description High breakdown voltage. (BVCEO=-400V) Low saturation voltage, typically VCE(sat) = -0.07V at Ic/IB =-10mA/-1mA. Wide SOA (safe operation area). Complementary to BTC4505M3. Symbol BTA1759M3 Outline SOT-89 B：Base C：Collector E：Emitter B C E Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Symbol VCBO VCEO VEBO IC Pd Limits -400 -400 -6 -300 0.6 1 (Note 1) 2 (Note 2) 208 125 (Note 1) 62.5 (Note 2) 150 -55~+150 Unit V V V mA W W W °C/W °C/W °C/W °C °C Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature RθJA Tj Tstg Note : 1.When mounted on FR-4 PCB with area measuring 10×10×1 mm 2.When mounted on ceramic with area measuring 40×40×1 mm BTA1759M3 CYStek Product Specification CYStech Electronics Corp. Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO ICES VCE(sat) 1 *VCE(sat) 2 *VCE(sat) 3 *VBE(sat) hFE 1 *hFE 2 *hFE 3 *hFE 4 Cob Min. -400 -400 -6 50 56 50 40 Typ. Max. -10 -10 -10 -0.2 -0.3 -0.6 -0.9 270 6 Unit V V V µA µA µA V V V V pF www.DataSheet4U.com Spec. No. : C309M3 Issued Date : 2003.06.30 Revised Date : Page No. : 2/4 Test Conditions IC=-50µA IC=-1mA IE=-50µA VCB=-400V VEB=-6V VCB=-400V IC=-1mA, IB=-0.1mA IC=-10mA, IB=-1mA IC=...