BTA1759N3

CYStech Electronics Corp. High Voltage PNP Epitaxial Planar Transistor www.DataSheet4U.com Spec. No. : C309N3 Issued Date : 2003.05.09 Revised Date : 2004.04.02 Page No. : 1/4 BTA1759N3 Description High breakdown voltage. (BVCEO=-400V) Low saturation voltage, typical VCE(sat) =-0.2V at Ic/IB =-20mA/-2mA. Wide SOA (safe operation area). Complementary to BTC4505N3. Symbol BTA1759N3 Outline SOT-23 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Pd Tj Tstg Limits -400 -400 -7 -300 225 150 -55~+150 Unit V V V mA mW °C °C BTA1759N3 CYStek Product Specification CYStech Electronics Corp. Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO ICER IEBO *VCE(sat) *VBE(sat) *hFE fT Cob Min. -400 -400 -7 100 Typ. -0.08 12 13 Max. -10 -20 -10 -0.5 -1.2 270 Unit V V V µA nA µA V V MHz pF www.DataSheet4U.com Spec. No. : C309N3 Issued Date : 2003.05.09 Revised Date : 2004.04.02 Page No. : 2/4 Test Conditions IC=-50µA IC=-1mA IE=-50µA VCB=-400V VCE=-300V, REB=4kΩ VEB=-6V IC=-20mA, IB=-2mA IC=-20mA, IB=-2mA VCE=-10V, IC=-10mA VCE=-10V, IC=-10mA, f=5MHz VCB=-10V, IE=0A, f=1MHz *Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2% BTA1759N3 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves Current Gian vs Collector Current 1000 10000 Saturation Voltage---(m...