CYStech Electronics Corp.
Spec. No. : C623M3 Issued Date : 2013.03.19 Revised Date : 2018.12.17 Page No. : 1/8
Silicon...
CYStech Electronics Corp.
Spec. No. : C623M3 Issued Date : 2013.03.19 Revised Date : 2018.12.17 Page No. : 1/8
Silicon PNP Epitaxial Planar Transistor
BTA1797M3
BVCEO IC VCESAT(Max)
-50V -3A -0.2V
Description
Low saturation
voltage, VCE(SAT) = -0.2V(max.) at IC/IB=-1A/-50mA. High current capability. Excellent DC current gain characteristics. Pb-free lead plating and halogen-free package.
Symbol
BTA1797M3
Outline
SOT-89
B:Base C:Collector E:Emitter
Absolute Maximum Ratings (Ta=25C)
Parameter
Collector-Base
Voltage Collector-Emitter
Voltage Emitter-Base
Voltage Collector Current (DC) Collector Current (Pulse) Base Current (DC)
Symbol
VCBO VCEO VEBO
IC ICP IB
Power Dissipation
PD
Thermal Resistance, Junction to Ambient
RθJA
Operating Junction Temperature Range
Tj
Storage Temperature Range
Tstg
Note : 1. Single Pulse Pw≦300μs, Duty≦2%.
2. When mounted on FR-4 PCB with area measuring 10×10×1 mm.
3. When mounted on ceramic with area mea...