CYStech Electronics Corp.
Low Vcesat PNP Epitaxial Planar Transistor
www.DataSheet4U.com Spec. No. : C601I3 Issued Date...
CYStech Electronics Corp.
Low Vcesat PNP Epitaxial Planar Transistor
www.DataSheet4U.com Spec. No. : C601I3 Issued Date : 2005.10.14 Revised Date : 2009.02.04 Page No. : 1/ 5
BTA1952I3
Features
BVCEO IC RCESAT
-100V -5A 150mΩ
Low VCE(sat), VCE(sat)=-0.45 V (typical), at IC / IB = -3A / -0.15A Excellent DC current gain characteristics Wide SOA Complementary to BTC5103I3 RoHS compliant package
Symbol
BTA1952I3
Outline
TO-251
B：Base C：Collector E：Emitter
B B CCE
Absolute Maximum Ratings (Ta=25°C)
Parameter Collector-Base
Voltage Collector-Emitter
Voltage Emitter-Base
Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature
Note : *1. Single Pulse Pw=10ms
Symbol VCBO VCEO VEBO IC(DC) IC(Pulse) Pd(TA=25℃) Pd(TC=25℃) Tj Tstg
Limits -100 -60 -5 -5 -10 1 25 150 -55~+150
Unit V V V *1 A W °C °C
BTA1952I3
CYStek Product Specification
CYStech Electronics Corp.
Characteristics (Ta=25°C)
Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat) *hFE 1 *hFE 2 fT Min. -100 -60 -5 70 30 Typ. -0.45 60 Max. -1 -1 -0.6 -1.2 240 Unit V V V μA μA V V MHz
www.DataSheet4U.com Spec. No. : C601I3 Issued Date : 2005.10.14 Revised Date : 2009.02.04 Page No. : 2/ 5
Test Conditions IC=-50μA, IE=0 IC=-10mA, IB=0 IE=-50μA, IC=0 VCB=-100V, IE=0 VEB=-5V, IC=0 IC=-3A, IB=-0.15A IC=-3A, IB=-0.15A VCE=-1V, IC=-1A VCE=-1V, IC=-3A VCE=-4V, IC=-1A, f=30MHz
*Pulse Test : Pulse Width ≤380μs, Duty Cycle≤2%
Ordering Information
Device BTA1952I3 Package TO-251 (RoHS...
