CYStech Electronics Corp.
Low Vcesat PNP Epitaxial Planar Transistor
www.DataSheet4U.com Spec. No. : C601J3 Issued Date...
CYStech Electronics Corp.
Low Vcesat PNP Epitaxial Planar Transistor
www.DataSheet4U.com Spec. No. : C601J3 Issued Date : 2004.05.17 Revised Date :2009.02.04 Page No. : 1/6
BTA1952J3
Features
Low VCE(sat), VCE(sat)=-0.3 V (typical), at IC / IB = -2A / -0.2A Excellent DC current gain characteristics Wide SOA Complementary to BTC5103J3 RoHS compliant package
BVCEO IC RCESAT
-100V -5A 150mΩ
Symbol
BTA1952J3
Outline
TO-252
B:Base C:Collector E:Emitter
B C E
Absolute Maximum Ratings (Ta=25°C)
Parameter Collector-Base
Voltage Collector-Emitter
Voltage Emitter-Base
Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature
Note : *1. Single Pulse Pw=10ms
BTA1952J3
Symbol VCBO VCEO VEBO IC(DC) IC(Pulse) Pd(TA=25℃) Pd(TC=25℃) Tj Tstg
Limits -100 -80 -5 -5 -10 1 10 150 -55~+150
Unit V V V *1 A W °C °C
CYStek Product Specification
CYStech Electronics Corp.
Characteristics (Ta=25°C)
Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat) *hFE 1 *hFE 2 fT Min. -100 -80 -5 100 120 Typ. -0.3 120 Max. -10 -10 -1.0 -1.5 390 Unit V V V μA μA V V MHz
www.DataSheet4U.com Spec. No. : C601J3 Issued Date : 2004.05.17 Revised Date :2009.02.04 Page No. : 2/6
Test Conditions IC=-50μA, IE=0 IC=-1mA, IB=0 IE=-50μA, IC=0 VCB=-100V, IE=0 VEB=-5V, IC=0 IC=-2A, IB=-0.2A IC=-2A, IB=-0.2A VCE=-3V, IC=-0.5A VCE=-2V, IC=-1A VCE=-5V, IC=-500mA, f=30MHz
*Pulse Test : Pulse Width ≤380μs, Duty Cycle≤2%
Classification of hFE 2
Rank Range Q 120~270 R 180~390
Orderi...