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BTA20-600CW

Inchange Semiconductor

Triacs

isc Triacs BTA20-600CW FEATURES ·With TO-220AB insulated package ·Suitable for general purpose where high surge curren...


Inchange Semiconductor

BTA20-600CW

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Description
isc Triacs BTA20-600CW FEATURES ·With TO-220AB insulated package ·Suitable for general purpose where high surge current capability is required.Application such as phase control and tatic switching on inductive or resistive load. ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDRM Repetitive peak off-state voltage VRRM Repetitive peak reverse voltage IT(RMS) RMS on-state current (full sine wave)Tj=70℃ ITSM Non-repetitive peak on-state current tp=10ms Tj Operating junction temperature Tstg Storage temperature Rth(j-c) Thermal resistance, junction to case Rth(j-a) Thermal resistance, junction to ambient MIN 600 600 20 210 125 -45~150 2.8 60 UNIT V V A A ℃ ℃ ℃/W ℃/W ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS IRRM Repetitive peak reverse current VR=VRRM, VR=VRRM, Tj=125℃ IDRM Repetitive peak off-state current VD=VDRM, VD=VDRM, Tj=125℃ IGT Gate trigger current Ⅰ-Ⅱ-Ⅲ VD=12V; RL= 33Ω IH Holding current IGT= 0.5A, Gate Open VGT Gate trigger voltage Ⅰ-Ⅱ-Ⅲ VD=12V; RL= 33Ω VTM On-state voltage IT= 28A; tp= 380μs MIN MAX UNIT 0.01 3.0 mA 0.01 3.0 mA 1 35 mA 50 mA 1.5 V 1.7 V NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without isc website:www.iscsemi.com isc & iscsemi is registered trademark notification. The information contained herein is presented only ...




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