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BTA212X-800B Datasheet

Part Number BTA212X-800B
Manufacturers NXP
Logo NXP
Description Three quadrant triacs high commutation
Datasheet BTA212X-800B DatasheetBTA212X-800B Datasheet (PDF)

Philips Semiconductors Product specification Three quadrant triacs high commutation GENERAL DESCRIPTION Glass passivated high commutation triacs in a full pack, plastic envelope intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. These devices will commutate the full rated rms current at the maximum rated junction temperature, without the aid of a snubber. BTA212X series B QUICK REFERENCE DATA SYMBOL VDRM IT(RMS) ITSM PARAMETER BTA212XRepetitive peak of.

  BTA212X-800B   BTA212X-800B






Part Number BTA212X-800F
Manufacturers NXP
Logo NXP
Description Three quadrant triacs guaranteed commutation
Datasheet BTA212X-800B DatasheetBTA212X-800F Datasheet (PDF)

Philips Semiconductors Product specification Three quadrant triacs guaranteed commutation GENERAL DESCRIPTION Passivated guaranteed commutation triacs in a full pack, plastic envelope intended for use in motor control circuits or with other highly inductive loads. These devices balance the requirements of commutation performance and gate sensitivity. The "sensitive gate" E series and "logic level" D series are intended for interfacing with low power drivers, including micro controllers. BTA21.

  BTA212X-800B   BTA212X-800B







Part Number BTA212X-800E
Manufacturers NXP
Logo NXP
Description Three quadrant triacs guaranteed commutation
Datasheet BTA212X-800B DatasheetBTA212X-800E Datasheet (PDF)

Philips Semiconductors Product specification Three quadrant triacs guaranteed commutation GENERAL DESCRIPTION Passivated guaranteed commutation triacs in a full pack, plastic envelope intended for use in motor control circuits or with other highly inductive loads. These devices balance the requirements of commutation performance and gate sensitivity. The "sensitive gate" E series and "logic level" D series are intended for interfacing with low power drivers, including micro controllers. BTA21.

  BTA212X-800B   BTA212X-800B







Part Number BTA212X-800C
Manufacturers NXP
Logo NXP
Description Three quadrant triacs high commutation
Datasheet BTA212X-800B DatasheetBTA212X-800C Datasheet (PDF)

Philips Semiconductors Preliminary specification Three quadrant triacs high commutation GENERAL DESCRIPTION Glass passivated high commutation triacs in a full pack, plastic envelope intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. These devices will commutate the full rated rms current at the maximum rated junction temperature, without the aid of a snubber. BTA212X series C QUICK REFERENCE DATA SYMBOL VDRM IT(RMS) ITSM PARAMETER BTA212XRepetitive pea.

  BTA212X-800B   BTA212X-800B







Three quadrant triacs high commutation

Philips Semiconductors Product specification Three quadrant triacs high commutation GENERAL DESCRIPTION Glass passivated high commutation triacs in a full pack, plastic envelope intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. These devices will commutate the full rated rms current at the maximum rated junction temperature, without the aid of a snubber. BTA212X series B QUICK REFERENCE DATA SYMBOL VDRM IT(RMS) ITSM PARAMETER BTA212XRepetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current MAX. MAX. MAX. UNIT 500B 500 12 95 600B 600 12 95 800B 800 12 95 V A A PINNING - SOT186A PIN 1 2 3 DESCRIPTION main terminal 1 PIN CONFIGURATION case SYMBOL T2 main terminal 2 gate 1 2 3 T1 case isolated G LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VDRM IT(RMS) ITSM PARAMETER Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current full sine wave; Ths ≤ 56 ˚C full sine wave; Tj = 25 ˚C prior to surge t = 20 ms t = 16.7 ms t = 10 ms ITM = 20 A; IG = 0.2 A; dIG/dt = 0.2 A/µs CONDITIONS MIN. -500 5001 MAX. -600 6001 12 -800 800 UNIT V A I2t dIT/dt IGM VGM PGM PG(AV) Tstg Tj I2t for fusing Repetitive rate of rise of on-state current after triggering Peak gate current Peak gate voltage Peak gate power Average gate power Storage temperature Operating junction temperature - 95 105 45 100 2 5 5 0.5 150 125 A A A2s A/µs.


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