Philips Semiconductors
Product specification
Three quadrant triacs high commutation
GENERAL DESCRIPTION
Glass passivat...
Philips Semiconductors
Product specification
Three quadrant triacs high commutation
GENERAL DESCRIPTION
Glass passivated high commutation triacs in a plastic envelope intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. These devices will commutate the full rated rms current at the maximum rated junction temperature, without the aid of a snubber.
BTA216 series B
QUICK REFERENCE DATA
SYMBOL VDRM IT(RMS) ITSM PARAMETER BTA216Repetitive peak off-state
voltages RMS on-state current Non-repetitive peak on-state current MAX. MAX. MAX. UNIT 500B 500 16 140 600B 600 16 140 800B 800 16 140 V A A
PINNING - TO220AB
PIN 1 2 3 tab DESCRIPTION main terminal 1
PIN CONFIGURATION
tab
SYMBOL
T2
main terminal 2 gate main terminal 2
1 23
T1
G
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VDRM IT(RMS) ITSM PARAMETER Repetitive peak off-state
voltages RMS on-state current Non-repetitive peak on-state current full sine wave; Tmb ≤ 99 ˚C full sine wave; Tj = 25 ˚C prior to surge t = 20 ms t = 16.7 ms t = 10 ms ITM = 20 A; IG = 0.2 A; dIG/dt = 0.2 A/µs CONDITIONS MIN. -500 5001 MAX. -600 6001 16 -800 800 UNIT V A
I2t dIT/dt IGM VGM PGM PG(AV) Tstg Tj
I2t for fusing Repetitive rate of rise of on-state current after triggering Peak gate current Peak gate
voltage Peak gate power Average gate power Storage temperature Operating junction temperature
-
140 150 98 100 2 5 5 0.5 150 125
A A A2s A/µs A V W...