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BTA216X-500B Datasheet

Part Number BTA216X-500B
Manufacturers NXP
Logo NXP
Description Three quadrant triacs high commutation
Datasheet BTA216X-500B DatasheetBTA216X-500B Datasheet (PDF)

Philips Semiconductors Product specification Three quadrant triacs high commutation GENERAL DESCRIPTION Glass passivated high commutation triacs in a full pack, plastic envelope intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. These devices will commutate the full rated rms current at the maximum rated junction temperature, without the aid of a snubber. BTA216X series B QUICK REFERENCE DATA SYMBOL VDRM IT(RMS) ITSM PARAMETER MAX. MAX. MAX. UNIT 600B .

  BTA216X-500B   BTA216X-500B






Part Number BTA216X-500C
Manufacturers NXP
Logo NXP
Description Three quadrant triacs high commutation
Datasheet BTA216X-500B DatasheetBTA216X-500C Datasheet (PDF)

Philips Semiconductors Preliminary specification Three quadrant triacs high commutation GENERAL DESCRIPTION Glass passivated high commutation triacs in a plastic envelope intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. These devices will commutate the full rated rms current at the maximum rated junction temperature, without the aid of a snubber. BTA216X series C QUICK REFERENCE DATA SYMBOL VDRM IT(RMS) ITSM PARAMETER MAX. MAX. MAX. UNIT 600C 600 16 .

  BTA216X-500B   BTA216X-500B







Three quadrant triacs high commutation

Philips Semiconductors Product specification Three quadrant triacs high commutation GENERAL DESCRIPTION Glass passivated high commutation triacs in a full pack, plastic envelope intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. These devices will commutate the full rated rms current at the maximum rated junction temperature, without the aid of a snubber. BTA216X series B QUICK REFERENCE DATA SYMBOL VDRM IT(RMS) ITSM PARAMETER MAX. MAX. MAX. UNIT 600B 600 16 140 800B 800 16 140 V A A BTA216X- 500B Repetitive peak off-state 500 voltages RMS on-state current 16 Non-repetitive peak on-state 140 current PINNING - SOT186A PIN 1 2 3 DESCRIPTION main terminal 1 PIN CONFIGURATION case SYMBOL T2 main terminal 2 gate 1 2 3 T1 case isolated G LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VDRM IT(RMS) ITSM PARAMETER Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current full sine wave; Ths ≤ 38 ˚C full sine wave; Tj = 25 ˚C prior to surge t = 20 ms t = 16.7 ms t = 10 ms ITM = 20 A; IG = 0.2 A; dIG/dt = 0.2 A/µs CONDITIONS MIN. -500 5001 MAX. -600 6001 16 -800 800 UNIT V A I2t dIT/dt IGM VGM PGM PG(AV) Tstg Tj I2t for fusing Repetitive rate of rise of on-state current after triggering Peak gate current Peak gate voltage Peak gate power Average gate power Storage temperature Operating junction temperature - 140 150 98 100 2 5 5 0.5 150 125 A A A2.


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