isc Triacs
INCHANGE Semiconductor
BTA24-800BW
FEATURES ·With TO-220AB insulated package ·Suitables for general purpose...
isc Triacs
INCHANGE Semiconductor
BTA24-800BW
FEATURES ·With TO-220AB insulated package ·Suitables for general purpose where high surge current
capability is required.Application such as phase control and tatic switching on inductive or resistive load. ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDRM Repetitive peak off-state
voltage
VRRM Repetitive peak off-state
voltage
IT(RMS) RMS on-state current (full sine wave)Tj=75℃
ITSM Non-repetitive peak on-state current tp=20ms
Tj
Operating junction temperature
Tstg Storage temperature
Rth(j-c) Thermal resistance, junction to case
Rth(j-a) Thermal resistance, junction to ambient
MIN
800 800 25 250 125 -40~150 1.7 60
UNIT
V V A A ℃ ℃ ℃/W ℃/W
ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
IRRM
Repetitive peak reverse current
VR=VRRM, Tj=25℃ VR=VRRM, Tj=125℃
IDRM
Repetitive peak off-state current
VD=VDRM,Tj=25℃ VD=VDRM, Tj=125℃
Ⅰ
MAX
0.005 3.0
0.005 3.0
50
UNIT
mA mA
IGT
Gate trigger current
Ⅱ
VD=12V; RL= 33Ω Ⅲ
50 mA
50
Ⅳ
100
IH
Holding current
IGT= 0.5A, Gate Open
70 mA
VGT Gate trigger
voltage all quadrant VD=12V; RL= 33Ω
1.3
V
VTM On-state
voltage
isc website： www.iscsemi.com
IT= 35A; tp= 380μs
1.55 V
isc & iscsemi is registered trademark
Fast Recovery Rectifier
INCHANGE Semiconductor
MUR1520
NOTICE： ISC reserves the rights to make changes of the conte...
