BTA41-800

isc Triacs INCHANGE Semiconductor BTA41-800 FEATURES ·With TOP3 insulated package ·Suitables for general purpose where high surge current capability is required. Application such as phase control and tatic switching on inductive or resistive load. ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MIN UNIT VDRM Repetitive peak off-state voltage 800 V VRRM Repetitive peak reverse voltage 800 V IT(RMS) RMS on-state current (full sine wave)Tj=80℃ 41 A ITSM Non-repetitive peak on-state current tp=20ms 410 A Tj Operating junction temperature 125 ℃ Tstg Storage temperature -40~150 ℃ PG(AV) Average gate power dissipation(Tj=125℃) 1 W Rth(j-c) Thermal resistance, junction to case 0.9 ℃/W Rth(j-a) Thermal resistance, junction to ambient 50 ℃/W ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS IRRM Repetitive peak reverse current VR=VRRM, VR=VRRM, Tj=125℃ IDRM Repetitive peak off-state current VD=VDRM, VD=VDRM, Tj=125℃ Ⅰ IGT Gate trigger current Ⅱ VD=12V; RL= 100Ω Ⅲ Ⅳ IH Holding current IGT= 0.5A, Gate Open VGT Gate trigger voltage all quadrant VD=12V; RL= 100Ω VTM On-state voltage ITM= 60A; tp= 380μs MAX 0.005 5.0 0.005 5.0 50 UNIT mA mA 50 mA 50 100 80 mA 1.3 V 1.55 V isc website： www.iscsemi.com isc & iscsemi is registered trademark isc Triacs INCHANGE Semiconductor BTA41-800 NOTICE： ISC reserves...