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BTA445Z-800BT Datasheet

Part Number BTA445Z-800BT
Manufacturers INCHANGE
Logo INCHANGE
Description Thyristor
Datasheet BTA445Z-800BT DatasheetBTA445Z-800BT Datasheet (PDF)

isc Thyristors INCHANGE Semiconductor BTA445Z-800BT DESCRIPTION ·With TO-3PN packaging ·Operating in 4 quadrants ·High commutation capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching applications ·Phase control ·Static switching on inductive or resistive load ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VDRM Repetitive peak off-state voltage VRRM Repetitive peak reverse voltage IT(RSM) Average on-state cu.

  BTA445Z-800BT   BTA445Z-800BT






Part Number BTA445Z-800BT
Manufacturers WeEn
Logo WeEn
Description 3Q Hi-Com Triac
Datasheet BTA445Z-800BT DatasheetBTA445Z-800BT Datasheet (PDF)

BTA445Z-800BT 3Q Hi-Com Triac Rev.01 - 11 April 2019 Product data sheet 1. General description Planar passivated high commutation three quadrant triac in a SOT1292 (IITO3P) package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. This "series BT" triac will commutate the full RMS current at the maximum rated junction temperature (Tj(max) = 150 °C) without the aid of a snubber. It is used in applications where "high junction operating temperature capabi.

  BTA445Z-800BT   BTA445Z-800BT







Thyristor

isc Thyristors INCHANGE Semiconductor BTA445Z-800BT DESCRIPTION ·With TO-3PN packaging ·Operating in 4 quadrants ·High commutation capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching applications ·Phase control ·Static switching on inductive or resistive load ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VDRM Repetitive peak off-state voltage VRRM Repetitive peak reverse voltage IT(RSM) Average on-state current Tc=105℃ ITSM Surge non-repetitive on-state current 50HZ 60HZ PG(AV) Average gate power dissipation ( over any 20 ms period ) Tj=125℃ 800 V 800 V 45 A 450 495 A 1 W Tj Operating junction temperature Tstg Storage temperature -40~125 ℃ -40~150 ℃ isc website:www.iscsemi.com isc & iscsemi is registered trademark isc Thyristors INCHANGE Semiconductor BTA445Z-800BT ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS MIN MAX UNIT IRRM Repetitive peak reverse current IDRM Repetitive peak off-state current VR=VRRM Rated; Tj=25℃ VD=VDRM Rated; Tj=125℃ 10 μA 2 mA VTM On-state voltage IGT Gate-trigger current VGT Rth (j-c) Gate-trigger voltage Junction to case IT=63.6A Ⅰ Ⅱ VD =12V;IT=0.1A Ⅲ Ⅳ VD =12V;IT=0.1A 1.7 V 50 50 mA 50 70 1.3 V 0.9 ℃/W NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only .


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