isc Thyristors
INCHANGE Semiconductor
BTB08-600B
DESCRIPTION ·With TO-220 packaging ·Can be operated in 4 quadrants ·A...
isc Thyristors
INCHANGE Semiconductor
BTB08-600B
DESCRIPTION ·With TO-220 packaging ·Can be operated in 4 quadrants ·Advanced technology to provide customers with high
commutation performances ·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS ·Switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDRM Repetitive peak off-state
voltage
VRRM Repetitive peak reverse
voltage
IT(AV) Average on-state current
Tc=75℃
ITSM Surge non-repetitive on-state current
50HZ 60HZ
PG(AV) Average gate power dissipation ( over any 20 ms period )
Tj
Operating junction temperature
Tstg Storage temperature
MAX
UNIT
600
V
600
V
8
A
80 84
A
1
W
-40~125 ℃ -40~150 ℃
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
isc Thyristors
INCHANGE Semiconductor
BTB08-600B
ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
MIN MAX UNIT
IRRM Repetitive peak reverse current IDRM Repetitive peak off-state current
VR=VRRM Rated; Tj=25℃ VD=VDRM Rated; Tj=125℃
0.01 0.5
mA
VTM On-state
voltage
IGT
Gate-trigger current
VGT Rth (j-c)
Gate-trigger
voltage Junction to case
IT=11A；tP=380μs
Ⅰ Ⅱ VD =12V;RL=33Ω; Ⅲ Ⅳ
VD =12V;RL=33Ω;
1.75 V
50
50 mA
50
100
1.6
V
4.3 ℃/W
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the app...
