www.DataSheet4U.com
BTB08-600BW3G, BTB08-800BW3G Triacs
Silicon Bidirectional Thyristors
Designed for high performance ...
www.DataSheet4U.com
BTB08-600BW3G, BTB08-800BW3G Triacs
Silicon Bidirectional Thyristors
Designed for high performance full‐wave ac control applications where high noise immunity and high commutating di/dt are required.
Features http://onsemi.com
ăBlocking
Voltage to 800 V ăOn‐State Current Rating of 8 Amperes RMS at 25°C ăUniform Gate Trigger Currents in Three Quadrants ăHigh Immunity to dV/dt - 2000 V/ms minimum at 125°C ăMinimizes Snubber Networks for Protection ăIndustry Standard TO‐220AB Package ăHigh Commutating dI/dt - 4 A/ms minimum at 125°C ăThese are Pb-Free Devices
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Peak Repetitive Off-State
Voltage (Note 1) (TJ = -40 to 125°C, Sine Wave, 50 to 60 Hz, Gate Open) BTB08-600BW3G BTB08-800BW3G On‐State RMS Current (Full Cycle Sine Wave, 60 Hz, TC = 80°C) Peak Non‐Repetitive Surge Current (One Full Cycle Sine Wave, 60 Hz, TC = 25°C) Circuit Fusing Consideration (t = 10 ms) Non-Repetitive Surge Peak Off-State
Voltage (TJ = 25°C, t = 10ms) Peak Gate Current (TJ = 125°C, t = 20ms) Peak Gate Power (Pulse Width ≤ 1.0 ms, TC = 80°C) Average Gate Power (TJ = 125°C) Operating Junction Temperature Range Storage Temperature Range Symbol VDRM, VRRM 600 800 IT(RMS) ITSM 8.0 90 A A Value Unit V
TRIACS 8 AMPERES RMS 600 thru 800 VOLTS
MT2 G 4 MT1
MARKING DIAGRAM
1
2
3
TO-220AB CASE 221A STYLE 4
BTB08-xBWG AYWW
I2t VDSM/ VRSM IGM PGM PG(AV) TJ Tstg
36 VDSM/VRSM +100 4.0 20 1.0 -ā40 to +125 -ā40 to +150
A2sec ...