BTB10

BTB/BTA10 Discrete Triacs(Non-Isolated/Isolated) Dimensions TO-220AB Dim. A B C D E F G H J K M N Q R Inches Min. Max. 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.270 0.100 0.125 0.045 0.065 0.110 0.230 0.025 0.040 0.100 BSC 0.170 0.190 0.045 0.055 0.014 0.022 0.090 0.110 Milimeter Min. Max. 12.70 13.97 14.73 16.00 9.91 10.66 3.54 4.08 5.85 6.85 2.54 3.18 1.15 1.65 2.79 5.84 0.64 1.01 2.54 BSC 4.32 4.82 1.14 1.39 0.35 0.56 2.29 2.79 T2 G T2 T1 G T1 ABSOLUTE MAXIMUM RATINGS Symbol IT(RMS) ITSM I²t dI/dt Parameter RMS on-state current (full sine wave) Non repetitive surge peak on-state current (full cycle, Tj initial = 25° C) I²t Value for fusing Critical rate of rise of on-state current _ 100 ns I G = 2 x I GT , tr < TO-220AB F = 60 Hz F = 50 Hz Tc = 105°C t = 16.7 ms t = 20 ms Value 10 105 100 55 Tj = 125° C 50 Unit A A A²s A/µs tp = 10 ms F = 120 Hz VDSM/V RSM Non repetitive surge peak off-state voltage IGM PG(AV) Tstg Tj Peak gate current Average gate p ower diss ipation Storage junction temperature range Operating junction temperature r ange tp = 10 ms tp = 20 µs Tj = 25°C Tj = 125°C Tj = 125° C VDRM/VRRM + 100 V A W °C 4 1 - 40 to + 150 - 40 to + 125 s ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) SNUBBERLESS™ and LOGIC LEVEL(3 Quadrants) Symbol Test Conditions Quadrant CW IGT (1) VGT VGD IH (2) IL dV/dt (2) VD = 12 V VD = VDRM IT = 500 mA IG = 1.2 IGT VD = 67 % VDRM gate open Tj = 125°C Tj = 125°C I - III II MIN. MIN. (dI/dt)...