BTB1132M3

CYStech Electronics Corp. Low Vcesat PNP Epitaxial Planar Transistor Spec. No. : C313M3 www.DataSheet4U.com Issued Date : 2003.05.13 Revised Date : Page No. : 1/4 BTB1132M3 Features Low VCE(sat), VCE(sat)=-0.15V (typical), at IC / IB =- 0.5A /- 50mA Complementary to BTD1664M3 Symbol BTB1132M3 Outline SOT-89 B：Base C：Collector E：Emitter B C E Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulse) Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP Pd Tj Tstg Limits -40 -32 -5 -1 -2.5 0.6 2 150 -55~+150 Unit V V V A A W °C °C *1 *2 Note : *1 Single pulse, Pw=10ms *2 When mounted on a 40 × 40 × 0.7mm ceramic board. BTB1132M3 CYStek Product Specification CYStech Electronics Corp. Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *hFE fT Cob Min. -40 -32 -5 82 Typ. -0.15 150 20 Max. -0.5 -0.5 -0.5 390 30 Unit V V V µA µA V MHz pF Spec. No. : C313M3 www.DataSheet4U.com Issued Date : 2003.05.13 Revised Date : Page No. : 2/4 Test Conditions IC=-50µA, IE=0 IC=-1mA, IB=0 IE=-50µA, IC=0 VCB=-20V,IE=0 VEB=-4V,IC=0 IC=-500mA, IB=-50mA VCE=-3V, IC=-0.1A VCE=-5V, IC=-50mA, f=100MHz VCB=-10V, f=1MHz *Pulse Test : Pulse Width ≤380us, Duty Cycle≤2% Classification of hFE Rank Range P 82~180 Q 120~270 R 180~390 BTB1132M3 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves Current Gain vs ...