CYStech Electronics Corp.
Low Vcesat PNP Epitaxial Planar Transistor
www.DataSheet4U.com Spec. No. : C812J3 Issued Date...
CYStech Electronics Corp.
Low Vcesat PNP Epitaxial Planar Transistor
www.DataSheet4U.com Spec. No. : C812J3 Issued Date : 2003.05.25 Revised Date : Page No. : 1/4
BTB1182J3
Features
Low VCE(sat), VCE(sat)=-0.7 V (typical), at IC / IB = -2A / -0.5A Excellent current gain characteristics Complementary to BTD1758J3
Symbol
BTB1182J3
Outline
TO-252
B:Base C:Collector E:Emitter
B C E
Absolute Maximum Ratings (Ta=25°C)
Parameter Collector-Base
Voltage Collector-Emitter
Voltage Emitter-Base
Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation (TC=25℃) Junction Temperature Storage Temperature
Note : Single Pulse , Pw=10ms
Symbol VCBO VCEO VEBO IC ICP Pd Tj Tstg
Limits -40 -30 -5 -2 -5 (Note) 10 150 -55~+150
Unit V V V A A W °C °C
BTB1182J3
CYStek Product Specification
CYStech Electronics Corp.
Characteristics (Ta=25°C)
Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *hFE fT Cob Min. -40 -30 -5 82 Typ. 100 50 Max. -1 -1 -1 560 Unit V V V µA µA V MHz pF
www.DataSheet4U.com Spec. No. : C812J3 Issued Date : 2003.05.25 Revised Date : Page No. : 2/4
Test Conditions IC=-50µA, IE=0 IC=-1mA, IB=0 IE=-50µA, IC=0 VCB=-20V, IE=0 VEB=-4V, IC=0 IC=-3A, IB=-0.1A VCE=-3V, IC=-0.5A VCE=-5V, IC=-0.1A, f=100MHz VCB=-10V, f =1MHz
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
Classification Of hFE
Rank Range P 82~180 Q 120~270 R 180~390 S 270~560
BTB1182J3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves
Current Gain vs Collector Cu...