CYStech Electronics Corp.
Spec. No. : C623M3 Issued Date : 2003.05.25 Revised Date : 2013.08.12 Page No. : 1/7
Low Vce...
CYStech Electronics Corp.
Spec. No. : C623M3 Issued Date : 2003.05.25 Revised Date : 2013.08.12 Page No. : 1/7
Low Vcesat PNP Epitaxial Planar Transistor
BTB1188M3R
BVCEO IC RCESAT(typ)
-30V -2A 0.22Ω
Features
Low VCE(sat), VCE(sat)=-0.65 V (typical), at IC / IB = -3A / -0.1A Excellent current gain characteristics Complementary to BTD1766M3 Pb-free lead plating and halogen-free package
Symbol
BTB1188M3R
Outline
SOT-89
B：Base C：Collector E：Emitter
BCE
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Collector-Base
Voltage Collector-Emitter
Voltage Emitter-Base
Voltage Collector Current (DC) Collector Current (Pulse)
Power Dissipation
VCBO VCEO VEBO
IC ICP
Pd
Power Dissipation
Pd
ESD susceptibility
Operating Junction Temperature Range
Tj
Storage Temperature Range
Tstg
Note : 1. Single Pulse , Pw=10ms
2. When mounting on a 40 ×40 ×0.7 mm ceramic board.
3. Human body model, 1.5kΩ in series with 100pF
BTA1797M3
Limits
-40 -30 -5 -2 -5 (...
