BTB1198N3

CYStech Electronics Corp. PNP Epitaxial Planar Transistor www.DataSheet4U.com Spec. No. : C824N3 Issued Date : 2006.06.06 Revised Date : Page No. : 1/6 BTB1198N3 Features Low VCE(SAT), VCE(SAT)= -0.16V (Typ.) @ IC/IB=-500mA/-50mA High breakdown voltage, BVCEO=-80V Complementary to BTD1782N3 Pb-free package Symbol BTB1198N3 Outline SOT-23 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation (TA=25°C) Power Dissipation (TC=25°C) Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Junction Temperature Storage Temperature Note : Free air condition BTB1198N3 CYStek Product Specification Symbol VCBO VCEO VEBO IC PD PD RθJA RθJC Tj Tstg Limits -80 -80 -5 -0.5 225 (Note) 560 556 (Note) 223 150 -55~+150 Unit V V V A mW mW °C/W °C/W °C °C CYStech Electronics Corp. Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *hFE fT Cob Min. -80 -80 -5 120 Typ. -0.16 180 11 Max. -0.5 -0.5 -0.5 390 Unit V V V µA µA V MHz pF www.DataSheet4U.com Spec. No. : C824N3 Issued Date : 2006.06.06 Revised Date : Page No. : 2/6 Test Conditions IC=-50µA IC=-2mA IE=-50µA VCB=-50V VEB=-4V IC=-500mA, IB=-50mA VCE=-3V, IC=-0.1A VCE=-10V, IC=-50mA, f=100MHz VCB=-10V, f=1MHz *Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2% Classification Of hFE Rank Range Q 120~270 R 180~390 Ordering Information Device BTB1198N3 Package SOT-23 ...