CYStech Electronics Corp.
Low Vcesat PNP Epitaxial Planar Transistor
BTB1199M3
Spec. No. : C315M3-A Issued Date : 2008....
CYStech Electronics Corp.
Low Vcesat PNP Epitaxial Planar Transistor
BTB1199M3
Spec. No. : C315M3-A Issued Date : 2008.06.04 Revised Date : 2013.08.05 Page No. : 1/8
Features
Low VCE(sat), VCE(sat)=-0.24V (typical), at IC / IB =- 500mA /- 20mA Pb-free package
Symbol
BTB1199M3
Outline
SOT-89
B：Base C：Collector E：Emitter
BCE
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base
Voltage Collector-Emitter
Voltage Emitter-Base
Voltage Collector Current(DC) Peak Collector Current Peak Base Current
Symbol
VCBO VCEO VEBO
IC ICM IBM
Power Dissipation
Pd
Junction Temperature
Tj
Storage Temperature
Tstg
Note : *1 Single pulse, Pw=10ms
*2 When mounted on FR-4 PCB with area measuring 10×10×1 mm *3 When mounted on ceramic with area measuring 40×40×1 mm
BTB1199M3
Limits
-40 -25 -5 -2 -4 -200 0.6 1 *2
2 *3 150
-55~+150
Unit V V V A A mA
W
°C °C
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C315M3-A Issued Date : 2008.06.04 Revised ...
