CYStech Electronics Corp.
Low Vcesat PNP Epitaxial Planar Transistor
www.DataSheet4U.com Spec. No. : C815I3 Issued Date...
CYStech Electronics Corp.
Low Vcesat PNP Epitaxial Planar Transistor
www.DataSheet4U.com Spec. No. : C815I3 Issued Date : 2005.03.29 Revised Date : 2009.02.04 Page No. : 1/ 6
BTB1205I3
Features
Low VCE(sat), VCE(sat)=-0.38 V (typical), at IC / IB = -3A / -60mA Excellent DC current gain characteristics Fast switching speed Large current capacity RoHS compliant package
BVCEO IC RCESAT
-20V -5A 127mΩ typ.
Applications
Strobe,
voltage regulators, relay drivers, lamp drivers
Symbol
BTB1805I3
Outline
TO-251
B：Base C：Collector E：Emitter
B C E
BTB1205I3
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings (Ta=25°C)
Parameter Collector-Base
Voltage Collector-Emitter
Voltage Emitter-Base
Voltage Collector Current(DC) Collector Current(Pulse) Base Current Power Dissipation (TA=25℃) Power Dissipation (TC=25℃) Junction Temperature Storage Temperature Note : 1. Single Pulse Pw=10ms Symbol VCBO VCEO VEBO IC ICP IB Pd Pd Tj Tstg
www.DataSheet4U.com Spec. No. : C815I3 Issued Date : 2005.03.29 Revised Date : 2009.02.04 Page No. : 2/ 6
Limits -25 -20 -5 -5 -8 (Note 1)
-0.5
Unit V V V A A W °C °C
1 10 150 -55~+150
Characteristics (Ta=25°C)
Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat) *hFE *hFE fT Cob Min. -25 -20 -5 190 60 Typ. -380 -1.0 320 60 Max. -0.5 -0.5 -500 -1.3 380 Unit V V V μA μA mV V MHz pF Test Conditions IC=-10μA, IE=0 IC=-1mA, IB=0 IE=-10μA, IC=0 VCB=-20V, IE=0 VEB=-4V, IC=0 IC=-3A, IB=-60mA IC=-3A, IB=-60mA VCE=-2V,...
