BTB1216J3

CYStech Electronics Corp. www.DataSheet4U.com Spec. No. : C811J3 Issued Date : 2008.12.10 Revised Date : 2009.02.04 Page No. : 1/7 PNP Epitaxial Planar High Current (High Performance) Transistor BTB1216J3 Features 4 Amps continuous current, up to 10 Amps peak current Very low saturation voltage Excellent gain characteristics specified up to 3 Amps Extremely low equivalent on resistance, RCE(SAT)=90mΩ at 3A RoHS compliant package BVCEO IC RCE(SAT) -140V -4A 90mΩ typ. Symbol BTB1216J3 Outline TO-252 B：Base C：Collector E：Emitter B C E Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Base Current Power Dissipation @TA=25°C Power Dissipation @TC=25°C Operating and Storage Temperature Range Note: 1.Single pulse, Pw≤10ms BTB1216J3 CYStek Product Specification Symbol VCBO VCEO VEBO IC ICP IB Pd Tj ; Tstg Limits -180 -140 -6 -4 -10 (Note 1) -1 1 20 -55 ~ +150 Unit V V V A A A W °C CYStech Electronics Corp. Characteristics (Ta=25°C, unless otherwise specified) Symbol BVCBO *BVCEO BVEBO ICBO IEBO *VCE(sat)1 *VCE(sat)2 *VCE(sat)3 *VCE(sat)4 *VBE(sat) *VBE(on) hFE1 *hFE2 *hFE3 *hFE4 fT Cob Min. -180 -140 -6 100 150 75 Typ. -210 -170 -8 -40 -70 -110 -270 -930 -830 200 200 140 10 110 40 Max. -50 -10 -60 -120 -150 -370 -1110 -950 400 Unit V V V nA nA mV mV mV mV mV mV MHz pF www.DataSheet4U.com Spec. No. : C811J3 Issued Date : 2008.12.10 Revised Dat...