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CYStech Electronics Corp.
Spec. No. : C817D3 Issued Date : 2005.05.16 Revised Date : Page No. : 1/...
www.DataSheet4U.com
CYStech Electronics Corp.
Spec. No. : C817D3 Issued Date : 2005.05.16 Revised Date : Page No. : 1/4
Low VCE(sat) PNP Epitaxial Planar Transistor
BTB1424AD3
Features
Excellent DC current gain characteristics Low Saturation
Voltage, VCE(sat)=-0.3V(typ) @IC=-2A, IB=-100mA. Complementary to BTD2150AD3 Pb-free package
Symbol
BTB1424AD3
Outline
TO-126ML
B：Base C：Collector E：Emitter EC B
Absolute Maximum Ratings (Ta=25°C)
Parameter Collector-Base
Voltage Collector-Emitter
Voltage Emitter-Base
Voltage Collector Current(DC) Collector Current(Pulsed) (Note 1) Power Dissipation(TA=25℃) Power Dissipation(TC=25℃) Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP Pd Tj Tstg Limits -50 -50 -6 -3 -5 1 10 150 -55~+150 Unit V V V A W °C °C
Note 1: Single pulse, Pw≤10ms, Duty Cycle≤30%.
BTB1424AD3
CYStek Product Specification
www.DataSheet4U.com
CYStech Electronics Corp.
Spec. No. : C817D3 Issued Date : 2005.05.16 Revised Date : Page No. : 2/4
Characteristics (Ta=25°C)
Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VCE(sat) *hFE fT Cob Min. -50 -50 -6 82 Typ. 240 35 Max. -0.1 -0.1 -0.4 -0.5 560 Unit V V V µA µA V V MHz pF Test Conditions IC=-50µA IC=-1mA IE=-50µA VCB=-20V VEB=-5V IC=-1A, IB=-50mA IC=-2A, IB=-100mA VCE=-2V, IC=-500mA VCE=-2V, IC=-500mA, f=100MHz VCB=-10V, f=1MHz
*Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2%
Classification Of hFE
Rank hFE range P 82~180 Q 120~270 R 180~390 S 270~560
BTB1424AD3
CYStek Product Specif...
