BTB1424N3

www.DataSheet4U.com CYStech Electronics Corp. Spec. No. : C817N3-R Issued Date : 2003.04.03 Revised Date :2004.09.30 Page No. : 1/5 Low VCE(sat) PNP Epitaxial Planar Transistor BTB1424N3 Features Excellent DC current gain characteristics Low Saturation Voltage VCE(sat)=-0.3V(typ)(IC=-2A, IB=-100mA). Complementary to BTD2150N3 Pb-free package Symbol BTB1424N3 Outline SOT-23 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulsed)(Note 1) Power Dissipation Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature Note 1: Single pulse, Pw≤10ms, Duty Cycle≤30%. Symbol VCBO VCEO VEBO IC ICP Pd RθJA Tj Tstg Limits -50 -50 -5 -3 -7 225 556 150 -55~+150 Unit V V V A mW °C/W °C °C BTB1424N3 CYStek Product Specification www.DataSheet4U.com CYStech Electronics Corp. Spec. No. : C817N3-R Issued Date : 2003.04.03 Revised Date :2004.09.30 Page No. : 2/5 Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *hFE fT Cob Min. -50 -50 -5 82 Typ. 240 35 Max. -1 -1 -0.5 560 Unit V V V µA µA V MHz pF Test Conditions IC=-50µA IC=-1mA IE=-50µA VCB=-30V VEB=-3V IC=-2A, IB=-100mA VCE=-2V, IC=-100mA VCE=-2V, IC=-500mA, f=100MHz VCB=-10V, IE=0A, f=1MHz *Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2% Classification Of hFE Rank Range P 82~180 Q 120~270 R 180~390 S 270~560 Ordering Information Device BTB1424...