BTB1580J3

CYStech Electronics Corp. PNP Epitaxial Planar Transistor Spec. No. : C655J3 www.DataSheet4U.com Issued Date : 2008.07.25 Revised Date :2009.02.04 Page No. : 1/6 BTB1580J3 Description BVCEO IC RCESAT -120V -4A 600mΩ The BTB1580J3 is a PNP Darlington transistor, designed for use in general purpose amplifier and low speed switching application. Pb-free package process is adopted. Equivalent Circuit BTB1580J3 C B ≒6K ≒ 8k Outline TO-252 ≒60 E B：Base C：Collector E：Emitter B C E Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation(TA=25℃) Power Dissipation(TC=25℃) Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Junction Temperature Storage Temperature Note : Single Pulse Pw≦300μs, Duty≦2%. Symbol VCBO VCEO VEBO IC ICP Pd RθJA RθJC Tj Tstg Limits -120 -120 -5 -4 -6 1.5 20 83.3 6.25 150 -55~+150 Unit V V V A A W W °C/W °C/W °C °C BTB1580J3 CYStek Product Specification CYStech Electronics Corp. Characteristics (Ta=25°C) Symbol BVCEO BVCBO ICBO ICEO IEBO *VCE(sat) *VBE(on) *hFE1 *hFE2 Cob Min. -120 -120 1000 500 Typ. Max. -1 -2 -2 -2 -2.8 200 Unit V V mA mA mA V V pF Spec. No. : C655J3 www.DataSheet4U.com Issued Date : 2008.07.25 Revised Date :2009.02.04 Page No. : 2/6 Test Conditions IC=-1mA, IB=0 IC=-100μA, IE=0 VCB=-100V, IE=0 VCE=-50V, IB=0 VEB=-5V, IC=0 IC=-2A, IB=-2mA VCE=-4V, IC=-2A VCE=-4V, IC=-1A VC...