CYStech Electronics Corp.
Spec. No. : C809J3 Issued Date : 2008.06.12 Revised Date: 2010.12.08
Page:1/7
Low Vcesat PNP Epitaxial Planar Transistor
BTB772J3
BVCEO IC RCE(SAT)
-30V -3A 225mΩ typ.
Features
• Low VCE(sat) • Excellent current gain characteristics • Complementary to BTD882J3 • RoHS compliant package
Symbol
BTB772J3
Outline
TO-252AB
TO-252AA
B:Base C:Collector E:Emitter
BCE
B CE
Absolute Maximum Ratings (Ta=25°C)
Parameter Collector-Base Voltage Collector-Emitter Voltage E.
PNP Transistor
CYStech Electronics Corp.
Spec. No. : C809J3 Issued Date : 2008.06.12 Revised Date: 2010.12.08
Page:1/7
Low Vcesat PNP Epitaxial Planar Transistor
BTB772J3
BVCEO IC RCE(SAT)
-30V -3A 225mΩ typ.
Features
• Low VCE(sat) • Excellent current gain characteristics • Complementary to BTD882J3 • RoHS compliant package
Symbol
BTB772J3
Outline
TO-252AB
TO-252AA
B:Base C:Collector E:Emitter
BCE
B CE
Absolute Maximum Ratings (Ta=25°C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature Storage Temperature Note : *1. Single Pulse Pw≦350μs,Duty≦2%.
Symbol
VCBO VCEO VEBO IC(DC) IC(pulse)
Pd(Ta=25℃)
Pd(Tc=25℃) Tj Tstg
BTB772J3
Limit
-40 -30 -6 -3 -5
1.25
10 150 -55~+150
*1
Unit V V V A A
W
°C °C
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C809J3 Issued Date : 2008.06.12 Revised Date: 2010.12.08
Page:2/7
Characteristics (Ta=25°C)
Symbol
BVCBO BVC.