DIGITRON SEMICONDUCTORS
BTC05-()A SERIES BTC05-()B SERIES SILICON BIDIRECTIONAL THYRISTORS
Available Non-RoHS (standard)...
DIGITRON SEMICONDUCTORS
BTC05-()A SERIES BTC05-()B SERIES SILICON BIDIRECTIONAL THYRISTORS
Available Non-RoHS (standard) or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
MAXIMUM RATINGS
Rating Peak repetitive off-state
voltage(1) (TJ = 110°C) BTC05-50A,B BTC05-100A,B BTC05-200A,B BTC05-400A,B BTC05-600A,B RMS on-state current (TC = 80°C) Peak non-repetitive surge current (1 cycle, 60 Hz, TJ = -40 to 110°C) Circuit fusing considerations (TJ = -40 to 110°C , t = 10ms) Peak gate power Average gate power Peak gate
voltage Operating junction temperature range Storage temperature range Symbol Value Unit
VDRM
50 100 200 400 600 5 30 4.5 10 0.5 5.0 -40 to +110 -40 to +150
Volts
IT(RMS) ITSM I2t PGM PG(AV) VGM TJ Tstg
Amps Amps A2s Watts Watts Volts °C °C
Note 1: Ratings apply for open gate conditions. Thyristor devices shall not be tested with a constant current source for blocking capability such that the
voltage applied exceeds the rated blocking
voltage. Note 2: Soldering temperatures shall not exceed +200°C for 10 seconds.
THERMAL CHARACTERISTICS
Characteristic Thermal resistance, junction to case Thermal resistance, junction to ambient Symbol RӨJC RӨJA Maximum 3 60 Unit °C/W °C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic Peak blocking current (either direction) (Rated VDRM @ TJ = 110°C, gate open) Peak on-state
voltage (either directio...