DIGITRON SEMICONDUCTORS
BTC12 SERIES SILICON BIDIRECTIONAL THYRISTORS
Available Non-RoHS (standard) or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
MAXIMUM RATINGS
Rating Peak repetitive off-state voltage (TJ = 125°C) BTC12-200 BTC12-400 BTC12-600
(1)
Symbol
Value
Unit
VDRM
200 400 600 12 90 100 40 16 0.35 4.0 -40 to +125 -40 to +150 10
Volts
RMS on-state current (TC = 70°C) Peak non-re.
SILICON BIDIRECTIONAL THYRISTORS
DIGITRON SEMICONDUCTORS
BTC12 SERIES SILICON BIDIRECTIONAL THYRISTORS
Available Non-RoHS (standard) or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
MAXIMUM RATINGS
Rating Peak repetitive off-state voltage (TJ = 125°C) BTC12-200 BTC12-400 BTC12-600
(1)
Symbol
Value
Unit
VDRM
200 400 600 12 90 100 40 16 0.35 4.0 -40 to +125 -40 to +150 10
Volts
RMS on-state current (TC = 70°C) Peak non-repetitive surge current (1 cycle, 50 Hz, t = 20ms) (1/2 cycle, 50Hz, t = 10ms) Circuit fusing considerations (TJ = -40 to 125°C , t = 10ms) Peak gate power (pulse width = 2.0µs) Average gate power (t = 10ms) Peak gate current (pulse width = 1.0µs) Operating junction temperature range Storage temperature range Maximum rate of change of on-state current (ITM = 12A, IG = 200mA)
IT(RMS) ITSM I2t PGM PG(AV) IGM TJ Tstg di/dt
Amps Amps A2s Watts Watts Amps °C °C A/µs
Note 1: Ratings apply for open gate conditions. Thyristor devices shall not be tested with a constant current source for blocking capability such that the voltage applied exceeds the rated blocking voltage.
THERMAL CHARACTERISTICS
Characteristic Thermal resistance, junction to case Symbol RӨJC Maximum 2.2 Unit °C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic Peak blocking current (either direction) (Rated VDRM @ TJ = 125°C, gate open) Peak on-state voltage (either direction) (ITM = 17A peak) .