BTC1510E3

www.DataSheet4U.com CYStech Electronics Corp. NPN Epitaxial Planar Transistor Spec. No. : C652E3 Issued Date : 2004.02.01 Revised Date : 2004.06.03 Page No. : 1/5 BTC1510E3 Description The BTC1510E3 is a NPN Darlington transistor, designed for general purpose amplifier and low speed switching application. High BVCEO Low VCE(SAT) High current gain Monolithic construction with built-in base-emitter shunt resistors Features: Equivalent Circuit BTC1510E3 C B R1≈8k R2≈120 Outline TO-220AB B：Base C：Collector E：Emitter E BCE BTC1510E3 CYStek Product Specification www.DataSheet4U.com CYStech Electronics Corp. Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Note : *1. Single Pulse Pw=100ms Spec. No. : C652E3 Issued Date : 2004.02.01 Revised Date : 2004.06.03 Page No. : 2/5 Symbol VCBO VCEO VEBO IC(DC) IC(Pulse) Pd(TA=25℃) Pd(TC=25℃) Tj Tstg Limits 150 150 5 10 15 2 65 150 -55~+150 Unit V V V *1 A W °C °C Characteristics (Ta=25°C) Symbol BVCBO BVCEO ICEO ICBO IEBO *VCE(sat) 1 *VCE(sat) 2 *VCE(sat) 3 *VBE(sat) *VBE(on) 1 *VBE(on) 2 *VFEC *hFE 1 *hFE 2 Min. 150 150 2 100 Typ. Max. 200 200 2 2 3 1.5 2 2.8 4.5 3 20 Unit V V µA µA mA V V V V V V V K Test Conditions IC=100µA, IE=0 IC=1mA, IB=0 VCE=150V, IE=0 VCB=150V, IE=0 VEB=5V, IC=0 IC=5A, IB=10mA IC=10A, IB=100mA IC=5A, IB=2.5mA IC=5A, IB=5mA VCE=3V, IC=5A VCE=3V, IC=10A IC=...