BTC2030A3

CYStech Electronics Corp. General Purpose NPN Epitaxial Planar Transistor www.DataSheet4U.com Spec. No. : C316 Issued Date : 2005.12.21 Revised Date : 2006.04.03 Page No. : 1/9 BTC2030A3 Features High breakdown voltage, BVCEO≥ 200V Large continuous collector current capability Low collector saturation voltage Pb-free package Symbol BTC2030A3 Outline TO-92 B：Base C：Collector E：Emitter ECB Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC IB Pd Tj Tstg Limits 280 200 6 1 0.5 900 150 -55~+150 Unit V V V A A mW °C °C BTC2030A3 CYStek Product Specification CYStech Electronics Corp. Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VCE(sat) *VBE(sat) *VBE(on) *hFE 1 *hFE 2 *hFE 3 fT Cob Min. 280 200 6 0.45 100 100 50 20 Typ. 0.2 100 Max. 100 100 0.5 1 0.9 0.75 320 20 Unit V V V nA nA V V V V MHz pF www.DataSheet4U.com Spec. No. : C316 Issued Date : 2005.12.21 Revised Date : 2006.04.03 Page No. : 2/9 Test Conditions IC=10µA IC=10mA IE=10µA VCB=250V VEB=6V IC=500mA, IB=50mA IC=1A, IB=50mA IC=500mA, IB=50mA VCE=5V, IC=5mA VCE=5V, IC=50mA VCE=5V, IC=200mA VCE=5V, IC=1A VCE=5V, IC=200mA VCB=10V, IE=0A,f=1MHz *Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2% Classification Of hFE 2 Rank Range O 100~200 Y 160~320 Ordering Information Device BTC2030A3 Package TO-92 (Pb-fre...