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CYStech Electronics Corp.
Spec. No. : C202N3 Issued Date : 2002.05.11
Revised Date : 2002.10.31 Pa...
www.DataSheet4U.com
CYStech Electronics Corp.
Spec. No. : C202N3 Issued Date : 2002.05.11
Revised Date : 2002.10.31 Page No. : 1/4
General Purpose NPN Epitaxial Planar Transistor
BTC2412N3
Description
The BTC2412N3 is designed for using in driver stage of AF amplifier and general purpose amplification. Low Cob. Typ. Cob=2.0pF Complementary to BTA1037N3 .
Equivalent Circuit
BTC2412N3 SOT-23
B:Base C:Collector E:Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter Collector-Base
Voltage Collector-Emitter
Voltage Emitter-Base
Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Pd Tj Tstg Limits 60 50 7 150 225 150 -55~+150 Unit V V V mA mW °C °C
BTC2412N3
CYStek Product Specification
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CYStech Electronics Corp.
Spec. No. : C202N3 Issued Date : 2002.05.11
Revised Date : 2002.10.31 Page No. : 2/4
Characteristics (Ta=25°C)
Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *hFE fT Cob Min. 60 50 7 120 80 Typ. 0.2 180 2 Max. 0.1 0.1 0.4 820 3.5 Unit V V V uA uA V MHz pF Test Conditions IC=100uA IC=1mA IE=50uA VCB=60V VEB=7V IC=50mA, IB=5mA VCE=6V, IC=1mA VCE=12V, IC=2mA, f=100MHz VCB=12V, f=1MHz
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
Classification Of hFE
Rank Range Q 120-270 R 180-390 S 270-560 T 410-820
Characteristic Curves
Current Gain vs Collector Current 1000 HFE@VCE=6V Saturation
Voltage-(mV) Current Gain---HFE 1000 VCE(SAT)@IC=10IB Saturation
Voltage vs Collector Current
100
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