CYStech Electronics Corp.
General Purpose NPN Epitaxial Planar Transistor
BTC2881L3
BVCEO
IC
RCESAT(MAX)
Spec. No....
CYStech Electronics Corp.
General Purpose NPN Epitaxial Planar Transistor
BTC2881L3
BVCEO
IC
RCESAT(MAX)
Spec. No. : C316L3 Issued Date : 2010.12.29 Revised Date : 2011.01.03 Page No. : 1/7
200V 1A 0.86Ω
Features
High breakdown
voltage, BVCEO≥ 200V Large continuous collector current capability Low collector saturation
voltage Pb-free lead plating and halogen-free package
Symbol
BTC2881L3
Outline
SOT-223
B:Base C:Collector E:Emitter
BCE
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base
Voltage Collector-Emitter
Voltage Emitter-Base
Voltage Collector Current Base Current Power Dissipation @TA=25℃
Power Dissipation @TC=25℃ Operating Junction and Storage Temperature Range
Symbol VCBO VCEO VEBO IC IB
PD
Tj ; Tstg
Limits
300 200
6 1 0.2 1
6
150
Unit
V V V A A W
W
°C
Ordering Information
Device BTC2881L3
Package
SOT-223 (Pb-free lead plating and halogen-free package)
BTC2881L3
Shipping 2500 pcs / Tape & Reel
CYStek Product Specific...