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BTC3097T3 Datasheet

Part Number BTC3097T3
Manufacturers CYStech
Logo CYStech
Description High Voltage NPN Triple Diffused Planar Transistor
Datasheet BTC3097T3 DatasheetBTC3097T3 Datasheet (PDF)

CYStech Electronics Corp. High Voltage NPN Triple Diffused Planar Transistor BTC3097T3 Spec. No. : C6633 Issued Date : 2012.01.19 Revised Date : Page No. : 1/6 Features • High voltage, BVCBO=1600V min., BVCEO=800V min. • Pb-free lead plating package Symbol BTC3097T3 Outline TO-126 B:Base C:Collector E:Emitter BCE Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Operating Junction and Stor.

  BTC3097T3   BTC3097T3






High Voltage NPN Triple Diffused Planar Transistor

CYStech Electronics Corp. High Voltage NPN Triple Diffused Planar Transistor BTC3097T3 Spec. No. : C6633 Issued Date : 2012.01.19 Revised Date : Page No. : 1/6 Features • High voltage, BVCBO=1600V min., BVCEO=800V min. • Pb-free lead plating package Symbol BTC3097T3 Outline TO-126 B:Base C:Collector E:Emitter BCE Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Operating Junction and Storage Temperature Range Note : *1. Single Pulse Pw≦300μs,Duty≦2%. Symbol VCBO VCEO VEBO IC(DC) IC(Pulse) Pd(Ta=25℃) Pd(Tc=25℃) Tj ; Tstg Limit 1600 800 6 1 3 *1 1 10 -55~+150 Unit V V V A A W °C BTC3097T3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C6633 Issued Date : 2012.01.19 Revised Date : Page No. : 2/6 Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO ICEO IEBO *VCE(sat) *VCE(sat) *VBE(sat) *hFE1 *hFE2 *hFE3 Cob tr tstg tf Min. 160.


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