BTC3906M3

CYStech Electronics Corp. General Purpose NPN Epitaxial Planar Transistor Spec. No. : C208M3 www.DataSheet4U.com Issued Date : 2003.08.18 Revised Date :2006.12.04 Page No. : 1/5 BTC3906M3 Description The BTC3906M3 is designed for general purpose applications requiring high breakdown voltage. Features High collector-emitter breakdown voltage. (BVCEO=160V @ IC=1mA) Complement to BTA1514M3 Pb-free package Symbol BTC3906M3 Outline SOT-89 B：Base C：Collector E：Emitter B C E Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Pd Tj Tstg Limits 180 160 6 600 0.6 1 (Note 1) 2 (Note 2) 150 -55~+150 Unit V V V mA W W W °C °C Note : 1. When mounted on FR-4 PCB with area measuring 10×10×1 mm 2 . When mounted on ceramic with area measuring 40×40×1 mm BTC3906M3 CYStek Product Specification CYStech Electronics Corp. Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat)1 *VCE(sat)2 *VBE(sat)1 *VBE(sat)2 *hFE1 *hFE2 *hFE3 *hFE4 fT Cob Min. 180 160 6 50 60 50 120 100 Typ. 0.1 Max. 50 50 0.15 0.2. 1 1 390 6 Unit V V V nA nA V V V V MHz pF Spec. No. : C208M3 www.DataSheet4U.com Issued Date : 2003.08.18 Revised Date :2006.12.04 Page No. : 2/5 Test Conditions IC=100μA IC=1mA IE=10μA VCB=120V VEB=4V IC=10mA, IB=1mA IC=50mA, IB=5mA IC=10mA, IB=1mA IC=50mA, IB=5mA VCE=5V, IC=1mA VCE=5V, IC=10mA VCE=5V, IC...