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BTC3906N3 Datasheet

Part Number BTC3906N3
Manufacturers Cystech Electonics Corp
Logo Cystech Electonics Corp
Description NPN Transistor
Datasheet BTC3906N3 DatasheetBTC3906N3 Datasheet (PDF)

CYStech Electronics Corp. General Purpose NPN Epitaxial Planar Transistor Spec. No. : C208N3 www.DataSheet4U.com Issued Date : 2002.05.11 Revised Date : 2005.01.12 Page No. : 1/4 BTC3906N3 Description The BTC3906N3 is designed for general purpose applications requiring high breakdown voltage. Features • High collector-emitter breakdown voltage. (BVCEO=160V @ IC=1mA) • Complement to BTA1514N3 Symbol BTC3906N3 Outline SOT-23 B:Base C:Collector E:Emitter Absolute Maximum Ratings (Ta=25°C) Pa.

  BTC3906N3   BTC3906N3






Part Number BTC3906N3G
Manufacturers CYStech
Logo CYStech
Description General Purpose NPN Epitaxial Planar Transistor
Datasheet BTC3906N3 DatasheetBTC3906N3G Datasheet (PDF)

CYStech Electronics Corp. General Purpose NPN Epitaxial Planar Transistor BTC3906N3G Spec. No. : C208N3G Issued Date : 2008.12.11 Revised Date : Page No. : 1/5 Description The BTC3906N3G is designed for general purpose applications requiring high breakdown voltage. Features • High collector-emitter breakdown voltage. (BVCEO=160V @ IC=1mA) • Complement to BTA1514N3G • Pb-free and Halogen-free package Symbol BTC3906N3G Outline SOT-23 B:Base C:Collector E:Emitter Absolute Maximum Ratings (Ta=.

  BTC3906N3   BTC3906N3







NPN Transistor

CYStech Electronics Corp. General Purpose NPN Epitaxial Planar Transistor Spec. No. : C208N3 www.DataSheet4U.com Issued Date : 2002.05.11 Revised Date : 2005.01.12 Page No. : 1/4 BTC3906N3 Description The BTC3906N3 is designed for general purpose applications requiring high breakdown voltage. Features • High collector-emitter breakdown voltage. (BVCEO=160V @ IC=1mA) • Complement to BTA1514N3 Symbol BTC3906N3 Outline SOT-23 B:Base C:Collector E:Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation (TA=25°C) Power Dissipation (TC=25°C) Thermal Resistance, Junction to Ambient (Note ) Thermal Resistance, Junction to Case Symbol VCBO VCEO VEBO IC PD PD RθJA RθJC Tj Tstg Junction Temperature Storage Temperature Note : Free air condition. Limits 180 160 6 600 225 (Note) 560 556 (Note) 223 150 -55~+150 Unit V V V mA mW mW °C/W °C/W °C °C BTC3906N3 CYStek Product Specification CYStech Electronics Corp. Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat)1 *VCE(sat)2 *VBE(sat)1 *VBE(sat)2 *hFE1 *hFE2 *hFE3 *hFE4 fT Cob Min. 180 160 6 25 60 40 52 100 Typ. 0.1 Max. 50 50 0.15 0.2. 1 1 390 6 Unit V V V nA nA V V V V MHz pF Spec. No. : C208N3 www.DataSheet4U.com Issued Date : 2002.05.11 Revised Date : 2005.01.12 Page No. : 2/4 Test Conditions IC=100µA IC=1mA IE=10µA VCB=120V VEB=4V IC=10mA, IB=1mA IC=50mA, IB=5mA IC=10mA, IB=1mA IC=50mA, IB=5mA VCE=5V, .


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