BTC3906N3G

CYStech Electronics Corp. General Purpose NPN Epitaxial Planar Transistor BTC3906N3G Spec. No. : C208N3G Issued Date : 2008.12.11 Revised Date : Page No. : 1/5 Description The BTC3906N3G is designed for general purpose applications requiring high breakdown voltage. Features High collector-emitter breakdown voltage. (BVCEO=160V @ IC=1mA) Complement to BTA1514N3G Pb-free and Halogen-free package Symbol BTC3906N3G Outline SOT-23 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation (TA=25°C) Power Dissipation (TC=25°C) Thermal Resistance, Junction to Ambient (Note ) Thermal Resistance, Junction to Case Junction Temperature Storage Temperature Note : Free air condition. BTC3906N3G Symbol VCBO VCEO VEBO IC PD PD RθJA RθJC Tj Tstg Limits 180 160 6 600 225 (Note) 560 556 (Note) 223 150 -55~+150 Unit V V V mA mW mW °C/W °C/W °C °C CY...