BTC4505M3

CYStech Electronics Corp. High Voltage NPN Epitaxial Planar Transistor BTC4505M3 Spec. No. : C210M3 Issued Date : 2003.05.15 Revised Date :2014.07.24 Page No. : 1/6 Features  High breakdown voltage, BVCEO (min)=400V.  Low saturation voltage, typically VCE(sat) =0.14V at IC/IB=50mA/5mA.  Complementary to BTA1759M3.  Pb-free lead plating and halogen-free package. Symbol BTC4505M3 Outline SOT-89 B：Base C：Collector E：Emitter BCE Ordering Information Device Package Shipping BTC4505M3-0-T2-G SOT-89 1000 pcs / Tape & Reel (Pb-free lead plating and halogen-free package) Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T2 :1000 pcs/tape & reel, 7” reel Product rank, zero for no rank products Product name BTC4505M3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C210M3 Issued Date : 2003.05.15 Revised Date :2014.07.24 Page No. : 2/6 Absolute Maximum Ratings (Ta=25C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Pd Tj Tstg Limit 500 400 6 300 600 150 -55~+150 Unit V V V mA mW C C Characteristics (Ta=25C) Symbol BVCBO BVCEO BVEBO ICBO ICES IEBO VCE(sat) VCE(sat) *VCE(sat) *VBE(sat) hFE hFE hFE hFE fT Cob Min. 500 400 6 80 120 100 40 - Typ. 0.08 0.08 0.14 0.68 20 7 Max. 100 100 100 0.15 0.15 0.25 0.75 270 - Recommended soldering...