CYStech Electronics Corp.
High Voltage NPN Epitaxial Planar Transistor
BTC4505N3
Spec. No. : C210N3 Issued Date : 2003....
CYStech Electronics Corp.
High
Voltage NPN Epitaxial Planar Transistor
BTC4505N3
Spec. No. : C210N3 Issued Date : 2003.05.09 Revised Date : 2018.04.13 Page No. : 1/7
Features
High breakdown
voltage. (BVCEO ≥400V) Low saturation
voltage Complementary to BTA1759N3 Pb-free lead plating and halogen-free package
Symbol
BTC4505N3
Outline
SOT-23
B:Base C:Collector E:Emitter
Ordering Information
Device BTC4505N3-0-T1-G
Package
SOT-23 (Pb-free lead plating and halogen-free package)
Shipping 3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel, 7” reel
Product rank, zero for no rank products
Product name
BTC4505N3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C210N3 Issued Date : 2003.05.09 Revised Date : 2018.04.13 Page No. : 2/7
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base
Voltage Collector-Emitter
Voltage Emitter-Base
Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC Pd Tj
Tstg
Limit
400 400 6 300 0.225 150
-55~+150
Unit
V V V mA W °C °C
Thermal Data
Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max
Symbol Rth,j-c Rth,j-a
Value 185 556
Unit °C/W
Characteristics (Ta=25°C)
Symbol
BVCBO BVCEO BVEBO
ICBO
ICER
IEBO *VCE(sat) *VBE(sat)
hFE fT Cob
Min.
400 400 6
-
-
100 -
Typ.
-
20 7
Max.
100
10...