BTC4672M3

CYStech Electronics Corp. Silicon NPN Epitaxial Planar Transistor BTC4672M3 Spec. No. : C819M3 Issued Date : 2005.08.16 Revised Date :2016.12.06 Page No. : 1/6 Features Low saturation voltage, typically VCE(sat)=0.1V at IC/IB=1A/50mA Excellent DC current gain characteristics Complementary to BTA1797M3 Pb-free lead plating and halogen-free package Symbol BTC4672M3 Outline SOT-89 B：Base C：Collector E：Emitter BC E Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Symbol VCBO VCEO VEBO IC ICP Power Dissipation PD Junction Temperature Tj Storage Temperature Tstg Note : 1. When mounted on FR-4 PCB with area measuring 10×10×1 mm 2 . When mounted on ceramic with area measuring 40×40×1 mm BTC4672M3 Limits 100 60 6 5 9 0.6 1 (Note 1) 2 (Note 2) 150 -55~+150 Unit V V V A A W °C °C CYStek Product Specification CYStech Electronics Corp. Spec. No. : C819M3 Issued Date : 2005.08.16 Revised Date :2016.12.06 Page No. : 2/6 Thermal Characteristics Parameter Thermal Resistance, Junction to Ambient Symbol RθJA Thermal Resistance, Junction to Case RθJC Note : 1. When mounted on FR-4 PCB with area measuring 10×10×1 mm 2 . When mounted on ceramic with area measuring 40×40×1 mm Value 208 125 (Note 1) 62.5 (Note 2) 105 60 39.3 Unit °C/W °C/W Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VCE(sat) *VBE(sat) hFE1 hFE2 fT Cob M...