BTC5706I3

CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor BTC5706I3 Spec. No. : C819I3 Issued Date : 2004.12.16 Revised Date :2011.11.18 Page No. : 1/7 Features Low collector-to-emitter saturation voltage High-speed switching High allowable power dissipation Large current capability RoHS compliant package Applications DC-DC converter, relay drivers, lamp drivers, motor drivers, strobes. Symbol BTC5706I3 Outline TO-251AB TO-251AA B：Base C：Collector E：Emitter B CE BCE BTC5706I3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C819I3 Issued Date : 2004.12.16 Revised Date :2011.11.18 Page No. : 2/7 Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Power Dissipation @ TA=25℃ Power Dissipation @ TC=25℃ Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Junction Temperature Storage Temperature Symbol VCBO VCES VCEO VEBO IC ICP IB PD PD RθJA RθJC Tj Tstg Limits 80 80 60 6 5 7.5 (Note 1) 1.2 0.8 15 156 8.33 150 -55~+150 Unit V V V V A A W °C/W °C/W °C °C Note : 1. Single Pulse , Pw≦380μs,Duty≦2%. Characteristics (Ta=25°C) Symbol BVCBO BVCES *BVCEO BVEBO ICBO IEBO *VCE(sat) 1 *VCE(sat) 2 *VBE(sat) *hFE fT Cob ton tstg tf Min. 80 80 60 6 200 - Typ. 110 200 0.89 400 15 35 300 20 Max. 1 1 135 240 1.2 560 - Unit V V V V μA μA mV mV V MHz pF ns ns ns ...