BTD1304N3

CYStech Electronics Corp. NPN Epitaxial Planar Transistor AUDIO MUTING APPLICATION BTD1304N3 BVCEO IC RCE(SAT) Spec. No. : C857N3 Issued Date : 2011.03.31 Revised Date : 2011.04.01 Page No. : 1/8 20V 500mA 0.3Ω(typ) Features High Emitter-Base voltage, VEBO=12V(min). High reverse hFE, reverse hFE=20(min.) @VCE=2V, IC=4mA. Low On-resistance, Ron=0.6Ω(max)@IB=1mA. Pb-free and halogen-free package. Symbol BTD1304N3 Outline SOT-23 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Power Dissipation Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC IB PD RθJA Tj Tstg BTD1304N3 Limit 50 20 12 500 50 225 556 150 -55~+150 Unit V V V mA mA mW °C/W °C °C CYStek Product Specification CYStech Electronics Corp. Spec. No. : C857N3 Issued Date : 2011.03.31 Revised Date : 2011.04.01 Page No. : 2/8 Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VCE(sat) *RCE(sat) *VBE(sat) *hFE1(FOR) *hFE2(FOR) *hFE 3(REV) fT Cob Ron Min. 50 20 12 - - 200 400 20 - - Typ. 34 0.15 0.3 0.67 - 250 10 - Max. 100 100 100 0.3 0.6 1 800 - 0.6 Unit V V V nA nA mV V Ω V MHz pF Ω Test Conditions IC=100μA, IE=0 IC=1mA, IB=0 IE=10μA, IC=0 VCB=40V, IE=0 VEB=12V, IC=0 IC=100mA, IB=10mA IC=500mA, IB=20mA IC=500mA, IB=20mA IC=100mA, IB=10mA VCE=2V, IC=4mA VCE=3V, IC=100mA VCE=2V, IC=4mA VCE=10V...